DIODE GEN PURP REV 200V 50A DO5
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard, Reverse Polarity |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 50A |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 50 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 75 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 50 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BYM07-300HE3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 500MA DO213 |
|
US3DC-HFComchip Technology |
RECTIFIER ULTRA FAST RECOVERY 20 |
|
1N5712-1Roving Networks / Microchip Technology |
SCHOTTKY DIODE |
|
S16BRGeneSiC Semiconductor |
DIODE GEN PURP 100V 16A DO220AA |
|
BAT46WHE3-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 100V 75MA SOD123 |
|
JAN1N1190Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 35A DO203AB |
|
FR20A02GeneSiC Semiconductor |
DIODE GEN PURP 50V 20A DO5 |
|
JANTXV1N1184Roving Networks / Microchip Technology |
DIODE GEN PURP 100V 35A DO203AB |
|
5820SMG/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 20V 3A DO215AB |
|
SFT13G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 1A TS-1 |
|
AL01ZV0Sanken Electric Co., Ltd. |
DIODE GEN PURP 200V 1A AXIAL |
|
VS-SD1100C22CVishay General Semiconductor – Diodes Division |
DIODE GP 2.2KV 1100A B43 PUK |
|
V15PM45HM3/IVishay General Semiconductor – Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |