DIODE GEN PURP 100V 35A DO203AB
Type | Description |
---|---|
Series: | Military, MIL-PRF-19500/297 |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 35A |
Voltage - Forward (Vf) (Max) @ If: | 1.4 V @ 110 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 10 µA @ 100 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AB, DO-5, Stud |
Supplier Device Package: | DO-5 |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
5820SMG/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 20V 3A DO215AB |
|
SFT13G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 1A TS-1 |
|
AL01ZV0Sanken Electric Co., Ltd. |
DIODE GEN PURP 200V 1A AXIAL |
|
VS-SD1100C22CVishay General Semiconductor – Diodes Division |
DIODE GP 2.2KV 1100A B43 PUK |
|
V15PM45HM3/IVishay General Semiconductor – Diodes Division |
RECTIFIER BARRIER SCHOTTKY TO-27 |
|
US1MWF-HFComchip Technology |
RECTIFIER ULTRA FAST RECOVERY 10 |
|
1N5816Roving Networks / Microchip Technology |
RECTIFIER DIODE |
|
1N5830GeneSiC Semiconductor |
DIODE SCHOTTKY 25V 25A DO4 |
|
ES3JC-HFComchip Technology |
RECTIFIER SUPER FAST RECOVERY 60 |
|
DSA15IM45UC-TUBWickmann / Littelfuse |
POWER DIODE DISCRETES-SCHOTTKY T |
|
JANTXV1N3595AUSRoving Networks / Microchip Technology |
DIODE GEN PURP 125V 150MA |
|
JAN1N5419USRoving Networks / Microchip Technology |
DIODE GEN PURP 500V 3A D5B |
|
FR155T/REIC Semiconductor, Inc. |
DIODE GEN PURP 600V 1.5A DO41 |