DIODE GEN PURP 150V 2A DO220AA
Type | Description |
---|---|
Series: | eSMP® |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 150 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 980 mV @ 2 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 25 ns |
Current - Reverse Leakage @ Vr: | 1 µA @ 150 V |
Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-220AA |
Supplier Device Package: | DO-220AA (SMP) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
D841S45TS01XDLA1IR (Infineon Technologies) |
DIODE GEN PURP BG-D7514-1 |
|
VS-MBRD330PBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 3A DPAK |
|
UF5406GP-TPMicro Commercial Components (MCC) |
DIODE GP 600V 3A DO201AD |
|
S1JL MHGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SUB SMA |
|
UG54GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 5A DO201AD |
|
EGP30A-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 3A GP20 |
|
D850N34TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 3.4KV 850A |
|
UG8JTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
|
HS18145Microsemi |
DIODE SCHOTTKY 45V 180A HALFPAK |
|
RGP02-12E-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GP 1.2KV 500MA DO204AL |
|
1N5392GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1.5A DO204AC |
|
DSEP75-06ARWickmann / Littelfuse |
DIODE GP 600V 75A ISOPLUS247 |
|
BAS21/8VLNexperia |
DIODE GP 250V 200MA TO236AB |