DIODE GEN PURP 600V 1A SUB SMA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 1 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.8 µs |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Capacitance @ Vr, F: | 9pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
UG54GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 5A DO201AD |
|
EGP30A-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 3A GP20 |
|
D850N34TXPSA1IR (Infineon Technologies) |
DIODE GEN PURP 3.4KV 850A |
|
UG8JTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
|
HS18145Microsemi |
DIODE SCHOTTKY 45V 180A HALFPAK |
|
RGP02-12E-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GP 1.2KV 500MA DO204AL |
|
1N5392GHB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1.5A DO204AC |
|
DSEP75-06ARWickmann / Littelfuse |
DIODE GP 600V 75A ISOPLUS247 |
|
BAS21/8VLNexperia |
DIODE GP 250V 200MA TO236AB |
|
DDB6U100N16RBOSA1Rochester Electronics |
RECTIFIER DIODE MODULE |
|
1N3166RPowerex, Inc. |
DIODE STUD MNT 240A 300V DO-9 |
|
CS1M-E3/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO214AC |
|
LSM315GE3/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 15V 3A DO215AB |