LMR-1200 W/NON-HALOGEN FR JKT, L
IC TELECOM INTERFACE 80LQFP
DIODE GEN PURP 800V 1A SMA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 1 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3 µs |
Current - Reverse Leakage @ Vr: | 5 µA @ 800 V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CDST-21-GComchip Technology |
DIODE GEN PURP 250V 200MA SOT23 |
|
NS8DTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO220AC |
|
VS-20TQ045-N3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20A TO-220 |
|
UH1CHE3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 1A DO214AC |
|
SRAF830 C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 8A ITO220AC |
|
1N5820USRoving Networks / Microchip Technology |
DIODE SCHOTTKY 20V 3A B-MELF |
|
RBE07V20ATE-17ROHM Semiconductor |
DIODE SCHOTTKY 20V 700MA UMD2 |
|
AR4PDHM3/87AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 2A TO277A |
|
HS1JL RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SUB SMA |
|
HFA08TB120Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 8A TO220AC |
|
APD340VP-E1Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 3A DO27 |
|
ES1DHE3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
S3MHE3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 3A DO214AB |