Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 250 V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1.25 V @ 200 mA |
Speed: | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 1 µA @ 200 V |
Capacitance @ Vr, F: | 5pF @ 0V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Operating Temperature - Junction: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NS8DTHE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 8A TO220AC |
|
VS-20TQ045-N3Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20A TO-220 |
|
UH1CHE3/61TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 1A DO214AC |
|
SRAF830 C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 30V 8A ITO220AC |
|
1N5820USRoving Networks / Microchip Technology |
DIODE SCHOTTKY 20V 3A B-MELF |
|
RBE07V20ATE-17ROHM Semiconductor |
DIODE SCHOTTKY 20V 700MA UMD2 |
|
AR4PDHM3/87AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 2A TO277A |
|
HS1JL RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SUB SMA |
|
HFA08TB120Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 8A TO220AC |
|
APD340VP-E1Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 3A DO27 |
|
ES1DHE3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
S3MHE3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 3A DO214AB |
|
SRAF840HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 8A ITO220AC |