DIODE GP 600V 6A MICRODE BUTTON
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 900 mV @ 6 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 25 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | Button, Axial |
Supplier Device Package: | Microde Button |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PR3004-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 400V 3A DO201AD |
|
MBR1045 C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 45V 10A TO220AC |
|
SF56-APMicro Commercial Components (MCC) |
DIODE GPP HE 5A DO-201AD |
|
RS1AL MTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 800MA SUB SMA |
|
CSICD10-1200 TR13Central Semiconductor |
DIODE SCHOTTKY 1.2KV 10A DPAK |
|
PR1507G-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 1KV 1.5A DO15 |
|
BYS459B-1500E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.5KV 6.5A TO263 |
|
1N4007GL-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 1KV 1A DO41 |
|
MBR130T3Sanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 1A SOD123 |
|
SK12E3/TR13Microsemi |
DIODE SCHOTTKY 20V 1A DO214AA |
|
ES2DHE3J/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO214AC |
|
SK52C M6GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 5A DO214AB |
|
SFA1003GHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 10A TO220AC |