DIODE GEN PURP 50V 800MA SUB SMA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50 V |
Current - Average Rectified (Io): | 800mA |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 800 mA |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 150 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 50 V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CSICD10-1200 TR13Central Semiconductor |
DIODE SCHOTTKY 1.2KV 10A DPAK |
|
PR1507G-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 1KV 1.5A DO15 |
|
BYS459B-1500E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.5KV 6.5A TO263 |
|
1N4007GL-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 1KV 1A DO41 |
|
MBR130T3Sanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 1A SOD123 |
|
SK12E3/TR13Microsemi |
DIODE SCHOTTKY 20V 1A DO214AA |
|
ES2DHE3J/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2A DO214AC |
|
SK52C M6GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 5A DO214AB |
|
SFA1003GHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 10A TO220AC |
|
GS1BSMC Diode Solutions |
SMT GLASS PASSIVATED RECTIFIER |
|
SBE001-TL-WSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 2A 6CPH |
|
SS5P5HM3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 5A TO277A |
|
1N4001G R1GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1A DO204AL |