CAP CER 0.68UF 50V X7R RADIAL
DIODE SCHOTTKY 40V 2.1A DO214AC
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 40 V |
Current - Average Rectified (Io): | 2.1A |
Voltage - Forward (Vf) (Max) @ If: | 690 mV @ 2 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 500 µA @ 40 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DA2710100LPanasonic |
DIODE GP 80V 100MA SSSMINI2-F4-B |
|
1N4247GPHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
RSFAL RUGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 500MA SUB SMA |
|
VS-12TQ040STRLPBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 15A D2PAK |
|
BY252GP-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
|
RS1ALHRVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 800MA SUB SMA |
|
VS-80EPF06PBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 80A TO247AC |
|
1N916_T50RSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 100V 200MA DO35 |
|
MBRD835LSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 35V 8A DPAK |
|
STPS3L25SSTMicroelectronics |
DIODE SCHOTTKY 25V 3A SMC |
|
SK34-7Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 3A SMC |
|
S2B-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 100V 1.5A SMB |
|
UGB5HTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 500V 5A TO263AB |