DIODE GEN PURP 100V 200MA DO35
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 200mA |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 10 mA |
Speed: | Small Signal =< 200mA (Io), Any Speed |
Reverse Recovery Time (trr): | 4 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 75 V |
Capacitance @ Vr, F: | 2pF @ 0V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AH, DO-35, Axial |
Supplier Device Package: | DO-35 |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MBRD835LSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 35V 8A DPAK |
|
STPS3L25SSTMicroelectronics |
DIODE SCHOTTKY 25V 3A SMC |
|
SK34-7Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 3A SMC |
|
S2B-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 100V 1.5A SMB |
|
UGB5HTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 500V 5A TO263AB |
|
RS1BLHMTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 800MA SUBSMA |
|
R1800-APMicro Commercial Components (MCC) |
DIODE GEN PURP 1.8KV 500MA DO41 |
|
1N4003GPHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
JANS1N6662USRoving Networks / Microchip Technology |
DIODE GEN PURP 400V 500MA D5A |
|
DSI30-08ACWickmann / Littelfuse |
DIODE GP 800V 30A ISOPLUS220 |
|
1N486B_T50RSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 250V 200MA DO35 |
|
VS-30EPH06PBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
|
RGP02-20E/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 2KV 500MA DO204 |