DIODE SCHOTTKY 30V 2A SUB SMA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 500 mV @ 2 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 400 µA @ 30 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SFAF506GHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 5A ITO220AC |
|
MP838-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO204AL |
|
SFAF1606G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 16A ITO220AC |
|
SF15G-APMicro Commercial Components (MCC) |
DIODE GPP SUPER FAST 1A DO-41 |
|
1N5392-TPMicro Commercial Components (MCC) |
DIODE GPP 1.5A DO-15 |
|
FR306G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 3A DO201AD |
|
S5GHE3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 5A DO214AB |
|
JAN1N5621USRoving Networks / Microchip Technology |
DIODE GEN PURP 800V 1A D5A |
|
FR153GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1.5A DO204AC |
|
SS24SHE3J_B/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 2A D0214AC |
|
VS-10TQ040PBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 10A TO220AC |
|
STTH30L06DSTMicroelectronics |
DIODE GEN PURP 600V 30A TO220AC |
|
GP08JHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 800MA DO204 |