DIODE GEN PURP 800V 3A DO201AD
Type | Description |
---|---|
Series: | - |
Package: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 500 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 800 V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
S5GHE3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 5A DO214AB |
|
JAN1N5621USRoving Networks / Microchip Technology |
DIODE GEN PURP 800V 1A D5A |
|
FR153GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1.5A DO204AC |
|
SS24SHE3J_B/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 2A D0214AC |
|
VS-10TQ040PBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 10A TO220AC |
|
STTH30L06DSTMicroelectronics |
DIODE GEN PURP 600V 30A TO220AC |
|
GP08JHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 800MA DO204 |
|
GP10J-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
SFAF1602GHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 16A ITO220AC |
|
20ETS08SVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 20A D2PAK |
|
EGP30FHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 3A GP20 |
|
MBR16H45HE3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 16A TO220AC |
|
MBRF10200HC0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 200V 10A ITO220AC |