CAP TANT 22UF 10% 10V 2312
DIODE GEN PURP 600V 3A DO214AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.15 V @ 3 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5 µs |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Capacitance @ Vr, F: | 30pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MA2711100LPanasonic |
DIODE GP 80V 100MA SSSMINI2-F2 |
|
VS-80EPS12PBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 80A TO247AC |
|
FM302Rectron USA |
DIODE GP GLASS 3A 100V SMC |
|
RGL41MHE3/97Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
|
UES706HR2Roving Networks / Microchip Technology |
DIODE GEN PURP 400V 20A DO4 |
|
SS10P5HM3/87AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 7A TO277A |
|
SS8PH9HM3/86AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 90V 8A TO277A |
|
BYM12-100HE3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO213AB |
|
RGP10BE-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO204AL |
|
1N8032-GAGeneSiC Semiconductor |
DIODE SCHOTTKY 650V 2.5A TO257 |
|
SRAS850HMNGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 8A TO263AB |
|
SF2005GHC0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 20A TO220AB |
|
RB420D-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 40V 100MA SOT23 |