DIODE GEN PURP 600V 2A DO15
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 2 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Capacitance @ Vr, F: | 15pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-204AC, DO-15, Axial |
Supplier Device Package: | DO-15 |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
HER107G-APMicro Commercial Components (MCC) |
DIODE GPP HE 1A DO-41 |
|
1N4004G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO204AL |
|
1N5406G B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO201AD |
|
RSFGL MTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 500MA SUBSMA |
|
RS1GLHMQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 800MA SUBSMA |
|
HER206G-TPMicro Commercial Components (MCC) |
DIODE GPP HE 2A DO-15 |
|
JANTXV1N6620UMicrosemi |
DIODE GEN PURP 200V 1.2A A-MELF |
|
SBL1030Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 30V 10A TO220AC |
|
BAS4002S02LRHE6327XTSA1IR (Infineon Technologies) |
DIODE SCHOTTKY 40V 200MA TSLP-2 |
|
1N5395-APMicro Commercial Components (MCC) |
DIODE GPP 1.5A DO-15 |
|
MURS160HE3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
|
RL151GRectron USA |
DIODE GP GLASS 50V 1.5A DO-15 |
|
MBRF7100 C0GTSC (Taiwan Semiconductor) |
DIODE SCHTKY 100V 7.5A ITO220AC |