IC BATT PWR MGMT 16SOIC
DIODE GEN PURP 50V 3A DO201AD
CAP CER 82PF 100V C0G/NP0 1812
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 950 mV @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 50 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-MBRB745PBFVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 7.5A D2PAK |
|
S3BHE3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
|
RL1N4002Rectron USA |
DIODE GEN PURP 1000V 1A A-405 |
|
US1KHE3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO214AC |
|
SBR02U30LP-7Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 30V 200MA 2DFN |
|
APD360VP-G1Zetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 60V 3A DO27 |
|
RSFJLHRVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 500MA SUBSMA |
|
BY206GPHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 400MA DO204 |
|
8ETX06-1Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO262 |
|
MBRM130LT1HSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY |
|
GP02-25-M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 2.5KV 250MA DO204 |
|
MBR735-E3/45Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 35V 7.5A TO220AC |
|
AS3PKHM3/87AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 2.1A TO277A |