DIODE GEN PURP 100V 2A GP20
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.2 V @ 2 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 5 µs |
Current - Reverse Leakage @ Vr: | 5 µA @ 100 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | DO-201AA, DO-27, Axial |
Supplier Device Package: | GP20 |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MBRB1650HE3/81Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 50V 16A TO263AB |
|
BY229B-600HE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263AB |
|
SRA890 C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 8A TO220AC |
|
VS-8ETL06FPPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO220FP |
|
SS36HE-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 60V 3A SOD123HE |
|
BAV16W-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 100V 150MA SOD123 |
|
FM4006WRectron USA |
DIODE 1A 800V SMX |
|
ES1DL MTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A SUB SMA |
|
1N4247GP-M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
S1JL MTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SUB SMA |
|
SK34-7-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 3A SMC |
|
2A7Rectron USA |
DIODE 1A 1000V SOD-123F |
|
DA2J10400LPanasonic |
DIODE GEN PURP 80V 200MA SMINI2 |