RES 2.21K OHM 0.05% 1/4W 1206
CAP CER 0.15UF 630V X7R 1812
DIODE GEN PURP 600V 8A TO263AB
HOOK-UP STRND 14AWG RED 1000'
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 1.85 V @ 20 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 145 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SRA890 C0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 8A TO220AC |
|
VS-8ETL06FPPBFVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO220FP |
|
SS36HE-TPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 60V 3A SOD123HE |
|
BAV16W-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 100V 150MA SOD123 |
|
FM4006WRectron USA |
DIODE 1A 800V SMX |
|
ES1DL MTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A SUB SMA |
|
1N4247GP-M3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
|
S1JL MTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A SUB SMA |
|
SK34-7-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 40V 3A SMC |
|
2A7Rectron USA |
DIODE 1A 1000V SOD-123F |
|
DA2J10400LPanasonic |
DIODE GEN PURP 80V 200MA SMINI2 |
|
HERAF803G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 8A ITO220AC |
|
SS3P3HE3/84AVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 3A DO220AA |