DIODE SCHOTTKY 50V 3A DO221AC
INFRARED & ULTRASONIC CEILING SE
Type | Description |
---|---|
Series: | TMBS®, SlimSMA™ |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 50 V |
Current - Average Rectified (Io): | 3A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 410 mV @ 2.5 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 1.4 mA @ 50 V |
Capacitance @ Vr, F: | 850pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-221AC, SMA Flat Leads |
Supplier Device Package: | DO-221AC (SlimSMA) |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
UF4004 R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A DO204AL |
![]() |
STTH812G-TRSTMicroelectronics |
DIODE GEN PURP 1.2KV 8A D2PAK |
![]() |
VSSB410S-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 1.9A DO214AA |
![]() |
MURS360BJWeEn Semiconductors Co., Ltd |
ULTRAFAST POWER DIODE |
![]() |
ES3DHM6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AB |
![]() |
RF081M2STRROHM Semiconductor |
DIODE GEN PURP 200V 800MA PMDU |
![]() |
BAS20LT1GSanyo Semiconductor/ON Semiconductor |
DIODE GP 200V 200MA SOT23-3 |
![]() |
PMEG10010ELRXNexperia |
DIODE SCHOTTKY 100V 1A SOD123 |
![]() |
UF1006-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
![]() |
DLA60I1200HAWickmann / Littelfuse |
DIODE GEN PURP 1200V 60A TO247AD |
![]() |
MPG06K-E3/100Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A MPG06 |
![]() |
HS1BL R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A SUB SMA |
![]() |
VS-1N2130AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 60A DO203AB |