DIODE GEN PURP 1.2KV 8A D2PAK
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 2.2 V @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 100 ns |
Current - Reverse Leakage @ Vr: | 8 µA @ 1200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Operating Temperature - Junction: | 175°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VSSB410S-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 100V 1.9A DO214AA |
|
MURS360BJWeEn Semiconductors Co., Ltd |
ULTRAFAST POWER DIODE |
|
ES3DHM6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AB |
|
RF081M2STRROHM Semiconductor |
DIODE GEN PURP 200V 800MA PMDU |
|
BAS20LT1GSanyo Semiconductor/ON Semiconductor |
DIODE GP 200V 200MA SOT23-3 |
|
PMEG10010ELRXNexperia |
DIODE SCHOTTKY 100V 1A SOD123 |
|
UF1006-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
|
DLA60I1200HAWickmann / Littelfuse |
DIODE GEN PURP 1200V 60A TO247AD |
|
MPG06K-E3/100Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A MPG06 |
|
HS1BL R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 1A SUB SMA |
|
VS-1N2130AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 60A DO203AB |
|
RB160MM-30TRROHM Semiconductor |
DIODE SCHOTTKY 30V 1A PMDU |
|
SR802HR0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 20V 8A DO201AD |