DIODE SCHOTTKY 45V 15A TO220AC
RF ANT 460MHZ WHIP STR NMO BASE
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 45 V |
Current - Average Rectified (Io): | 15A |
Voltage - Forward (Vf) (Max) @ If: | 750 mV @ 15 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 500 µA @ 45 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BYV27-600-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 2A SOD57 |
|
STTH30RQ06G2Y-TRSTMicroelectronics |
AUTOMOTIVE-GRADE ULTRAFAST DIODE |
|
HS2MFS M3GTSC (Taiwan Semiconductor) |
75NS, 2A, 1000V, HIGH EFFICIENT |
|
SK34B-LTPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 40V 3A DO214AA |
|
SF2L4GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO204AC |
|
SURS8340T3GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 400V 3A SMC |
|
1N5190Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 3A AXIAL |
|
RSFJL M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 500MA SUBSMA |
|
BAS16-GComchip Technology |
DIODE GEN PURP 75V 200MA SOT23 |
|
VS-1N2129AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 60A DO203AB |
|
SK110BHR5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 1A DO214AA |
|
U2B-E3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 2A DO214AA |
|
RGP30G-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |