75NS, 2A, 1000V, HIGH EFFICIENT
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1000 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 2 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 75 ns |
Current - Reverse Leakage @ Vr: | 1 µA @ 1000 V |
Capacitance @ Vr, F: | 12pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | SOD-128 |
Supplier Device Package: | SOD-128 |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SK34B-LTPMicro Commercial Components (MCC) |
DIODE SCHOTTKY 40V 3A DO214AA |
|
SF2L4GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO204AC |
|
SURS8340T3GSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 400V 3A SMC |
|
1N5190Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 3A AXIAL |
|
RSFJL M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 500MA SUBSMA |
|
BAS16-GComchip Technology |
DIODE GEN PURP 75V 200MA SOT23 |
|
VS-1N2129AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 60A DO203AB |
|
SK110BHR5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 1A DO214AA |
|
U2B-E3/52TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 2A DO214AA |
|
RGP30G-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
|
SA2D-M3/61TVishay General Semiconductor – Diodes Division |
DIODE GPP 2A 200V DO-214AC |
|
1N4005-TZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 1A DO41 |
|
SB2060TASMC Diode Solutions |
DIODE SCHOTTKY 60V 20A DO201AD |