DIODE SCHTKY 1200V 38A PGTO252-2
Type | Description |
---|---|
Series: | CoolSiC™+ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 38A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.8 V @ 10 A |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | 0 ns |
Current - Reverse Leakage @ Vr: | 62 µA @ 12 V |
Capacitance @ Vr, F: | 29pF @ 800V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | PG-TO252-2 |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N5552C.TRSemtech |
DIODE GEN PURP 600V 5A AXIAL |
|
FESF16DT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 16A ITO220AC |
|
SBRT2U15LP-7Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 15V 2A 3DFN |
|
VS-240U120DVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 320A DO205 |
|
NTE548NTE Electronics, Inc. |
R-SI MICRO OVEN 12KV |
|
VS-10ETS08FP-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 10A TO220-2 |
|
VS-60APU06HN3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 60A TO247AC |
|
SS26L RQGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 2A SUB SMA |
|
1N4004E-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
MPG06DHE3_A/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A MPG06 |
|
1N3214RGeneSiC Semiconductor |
DIODE GEN PURP REV 600V 15A DO5 |
|
VS-70HFR140Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.4KV 70A DO203AB |
|
RFN2LAM4STFTRROHM Semiconductor |
RFN2LAM4STF IS THE HIGH RELIABIL |