DIODE GEN PURP 800V 10A TO220-2
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 10 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 50 µA @ 800 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack |
Supplier Device Package: | TO-220-2 Full Pack |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-60APU06HN3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 60A TO247AC |
|
SS26L RQGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 60V 2A SUB SMA |
|
1N4004E-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A DO204AL |
|
MPG06DHE3_A/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A MPG06 |
|
1N3214RGeneSiC Semiconductor |
DIODE GEN PURP REV 600V 15A DO5 |
|
VS-70HFR140Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.4KV 70A DO203AB |
|
RFN2LAM4STFTRROHM Semiconductor |
RFN2LAM4STF IS THE HIGH RELIABIL |
|
BAS381-TRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 30MA MICROMLF |
|
RS3DB-T R5GTSC (Taiwan Semiconductor) |
150NS 3A 200V FAST RECOVERY RECT |
|
1N4938-1Roving Networks / Microchip Technology |
DIODE GEN PURP 175V 100MA DO35 |
|
SL13-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30V 1.5A DO214AC |
|
VS-8ETH06STRLHM3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263 |
|
MBRD350T4GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 50V 3A DPAK |