







MEMS OSC XO 166.6660MHZ LVCMOS
DIODE SCHOTTKY 40V 3A PMDS
LED DRIVER CC AC/DC 31-92V 1.05A
MOSFET N-CH 55V 80A TO220-3
| Type | Description |
|---|---|
| Series: | Automotive, AEC-Q101 |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Not For New Designs |
| Diode Type: | Schottky |
| Voltage - DC Reverse (Vr) (Max): | 40 V |
| Current - Average Rectified (Io): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 700 mV @ 3 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | - |
| Current - Reverse Leakage @ Vr: | 5 µA @ 40 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AC, SMA |
| Supplier Device Package: | PMDS |
| Operating Temperature - Junction: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
SM513Diotec Semiconductor |
DIODE STD MELF 1300V 1A |
|
|
ACGRCT302-HFComchip Technology |
DIODE GEN PURP 400V 3A 3220 |
|
|
S12QGeneSiC Semiconductor |
DIODE GEN PURP 1200V 12A DO4 |
|
|
AR4PGHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 2A TO277A |
|
|
SFS1602G MNGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 16A TO263AB |
|
|
MBR3540GeneSiC Semiconductor |
DIODE SCHOTTKY 40V 35A DO4 |
|
|
MUR460 B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 4A DO201AD |
|
|
VS-10MQ060HM3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 1A DO214AC |
|
|
VSKY10201406-G4-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 1A CLP1406-2L |
|
|
R1200FRectron USA |
DIODE GEN PURP 1200V 500MA DO41 |
|
|
S2J-M3/52TVishay General Semiconductor – Diodes Division |
DIODE GPP 1.5A 600V DO-214AA |
|
|
SURA8215T3G-VF01Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 150V 2A SMA |
|
|
VS-72HFR80Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 70A DO203AB |