DIODE GEN PURP 1200V 12A DO4
N-SP/BNC-RP RG58 1M
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 12A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 12 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 10 µA @ 50 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis, Stud Mount |
Package / Case: | DO-203AA, DO-4, Stud |
Supplier Device Package: | DO-4 |
Operating Temperature - Junction: | -65°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
AR4PGHM3_A/HVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 2A TO277A |
![]() |
SFS1602G MNGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 100V 16A TO263AB |
![]() |
MBR3540GeneSiC Semiconductor |
DIODE SCHOTTKY 40V 35A DO4 |
![]() |
MUR460 B0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 4A DO201AD |
![]() |
VS-10MQ060HM3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 1A DO214AC |
![]() |
VSKY10201406-G4-08Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20V 1A CLP1406-2L |
![]() |
R1200FRectron USA |
DIODE GEN PURP 1200V 500MA DO41 |
![]() |
S2J-M3/52TVishay General Semiconductor – Diodes Division |
DIODE GPP 1.5A 600V DO-214AA |
![]() |
SURA8215T3G-VF01Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 150V 2A SMA |
![]() |
VS-72HFR80Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 70A DO203AB |
![]() |
MPG06A-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A MPG06 |
![]() |
SB150Rochester Electronics |
RECTIFIER DIODE |
![]() |
ES2CHR5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 2A DO214AA |