DIODE GEN PURP 400V 2A POWERMITE
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1.25 V @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 400 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | DO-216AA |
Supplier Device Package: | Powermite |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BYM10-800HE3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO213AB |
|
STPS8L30DEE-TRSTMicroelectronics |
DIODE SCHOTTKY 30V 8A POWERFLAT |
|
CMR2U-06 BK PBFREECentral Semiconductor |
DIODE GEN PURP 600V 2A SMB |
|
1N5408GHA0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 3A DO201AD |
|
SR109 B0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 1A DO204AL |
|
S1D M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AC |
|
BA892-02V-E6327Rochester Electronics |
RECTIFIER DIODE, 35V |
|
1N5819 TR TIN/LEADCentral Semiconductor |
DIODE SCHOTTKY 40V 1A DO41 |
|
S4PB-M3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 4A TO277A |
|
JANTX1N4148UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 75V 200MA DO213AA |
|
RB400VYM-50FHTRROHM Semiconductor |
SCHOTTKY BARRIER DIODE (AEC-Q101 |
|
GL41A-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO213AB |
|
NSB8BT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 8A TO263AB |