DIODE GEN PURP 3A DO201AD
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | - |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 3 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 5 µA @ 1000 V |
Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SR109 B0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 1A DO204AL |
|
S1D M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A DO214AC |
|
BA892-02V-E6327Rochester Electronics |
RECTIFIER DIODE, 35V |
|
1N5819 TR TIN/LEADCentral Semiconductor |
DIODE SCHOTTKY 40V 1A DO41 |
|
S4PB-M3/87AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 4A TO277A |
|
JANTX1N4148UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 75V 200MA DO213AA |
|
RB400VYM-50FHTRROHM Semiconductor |
SCHOTTKY BARRIER DIODE (AEC-Q101 |
|
GL41A-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO213AB |
|
NSB8BT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 8A TO263AB |
|
NSR05F30NXT5GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 500MA 2DSN |
|
NTE5962NTE Electronics, Inc. |
R-400PRV 25A CATH CASE |
|
JANTXV1N5819-1Roving Networks / Microchip Technology |
DIODE SCHOTTKY 45V 1A DO41 |
|
RGL1BDiotec Semiconductor |
DIODE FR DO-213AA 100V 1A |