NOW WEEN - BYV10X-600P - ULTRAFA
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 2 V @ 10 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 Full Pack |
Supplier Device Package: | TO-220F |
Operating Temperature - Junction: | 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SS24L RUGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 2A SUB SMA |
|
1N3595UR-1Roving Networks / Microchip Technology |
DIODE GEN PURP 125V 150MA DO213 |
|
BYP25A05Diotec Semiconductor |
DIODE STD D13X10.7W 50V 25A |
|
SR104 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 1A DO204AL |
|
PMEG3010ER,115Nexperia |
DIODE SCHOTTKY 30V 1A CFP3 |
|
S3GB-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 400V 3A DO214AA |
|
JANTX1N6622USRoving Networks / Microchip Technology |
DIODE GEN PURP 660V 2A D5A |
|
GD30MPS06JGeneSiC Semiconductor |
650V 30A TO-263-7 SIC SCHOTTKY M |
|
BYM11-600-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO213AB |
|
PAD50DFN 8LLinear Integrated Systems, Inc. |
DIODE GEN PURP 30V 10MA 8DFN |
|
MUR420-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 4A DO201AD |
|
SF64GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 6A DO201AD |
|
HS2D R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO214AA |