CAP CER 1000PF 50V NP0 AXIAL
650V 30A TO-263-7 SIC SCHOTTKY M
UR20-16DO-P
3M, 4X10 QSFP/QSFP, PARALIGHT
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Diode Type: | Silicon Carbide Schottky |
Voltage - DC Reverse (Vr) (Max): | - |
Current - Average Rectified (Io): | 51A (DC) |
Voltage - Forward (Vf) (Max) @ If: | - |
Speed: | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | - |
Capacitance @ Vr, F: | 735pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Supplier Device Package: | TO-263-7 |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BYM11-600-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 1A DO213AB |
|
PAD50DFN 8LLinear Integrated Systems, Inc. |
DIODE GEN PURP 30V 10MA 8DFN |
|
MUR420-E3/73Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 4A DO201AD |
|
SF64GHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 6A DO201AD |
|
HS2D R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO214AA |
|
VS-1N3673AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 12A DO203AA |
|
VIT3080S-E3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 30A 80V TO-262AA |
|
S1PBHM3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 1A DO220AA |
|
CMR3U-10 BK PBFREECentral Semiconductor |
DIODE GEN PURP 1KV 3A SMC |
|
GP10K-4006EHE3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 1A DO204AL |
|
MUR320SBHR5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 3A DO214AA |
|
CGRB304-GComchip Technology |
DIODE GEN PURP 400V 3A DO214AA |
|
SDM02M30LP3-7BZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 30V 100MA 2-XFDFN |