DIODE SCHOTTKY 30V 30A POWERFLAT
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30 V |
Current - Average Rectified (Io): | 30A |
Voltage - Forward (Vf) (Max) @ If: | 510 mV @ 30 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 750 µA @ 30 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | PowerFlat™ (5x6) |
Operating Temperature - Junction: | 150°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
STTH3R06SSTMicroelectronics |
DIODE GEN PURP 600V 3A SMC |
|
S1D-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
|
MUR140RLRochester Electronics |
RECTIFIER DIODE |
|
SR805 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 8A DO201AD |
|
AU3PK-M3/87AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1.4A TO277A |
|
BAT960,115Nexperia |
DIODE SCHOTTKY 23V 1A SOT666 |
|
ES3G R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO214AB |
|
SK59CHR7GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 5A DO214AB |
|
SF26G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 2A DO204AC |
|
BAS17,215Nexperia |
DIODE GEN PURP 5V 200MA SOT23 |
|
31GF6-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |
|
LXA04B600Power Integrations |
DIODE GEN PURP 600V 4A TO263AB |
|
GL41T-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.3KV 1A DO213AB |