DIODE GEN PURP 200V 1A DO214AC
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 1 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.8 µs |
Current - Reverse Leakage @ Vr: | 1 µA @ 200 V |
Capacitance @ Vr, F: | 12pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MUR140RLRochester Electronics |
RECTIFIER DIODE |
|
SR805 A0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 50V 8A DO201AD |
|
AU3PK-M3/87AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 1.4A TO277A |
|
BAT960,115Nexperia |
DIODE SCHOTTKY 23V 1A SOT666 |
|
ES3G R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 3A DO214AB |
|
SK59CHR7GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 90V 5A DO214AB |
|
SF26G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 2A DO204AC |
|
BAS17,215Nexperia |
DIODE GEN PURP 5V 200MA SOT23 |
|
31GF6-M3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |
|
LXA04B600Power Integrations |
DIODE GEN PURP 600V 4A TO263AB |
|
GL41T-E3/96Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.3KV 1A DO213AB |
|
1N4448HLP-7Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 80V 125MA 2DFN |
|
BYG24G-M3/TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 400V 1.5A |