DIODE GEN PURP 800V 800MA SUBSMA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 800 V |
Current - Average Rectified (Io): | 800mA |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 800 mA |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 500 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 800 V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SK320A R3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 200V 3A DO214AC |
|
GP08G-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 800MA DO204 |
|
APT100DL60BGRoving Networks / Microchip Technology |
DIODE GEN PURP 600V 100A TO247 |
|
SE20PAGHM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1.6A DO220AA |
|
ACGRC302-HFComchip Technology |
DIODE GEN PURP 100V 3A DO214AB |
|
CDBW0520L-HFComchip Technology |
DIODE SCHOTTKY 20V 500MA SOD123 |
|
M2325HA400Wickmann / Littelfuse |
DIODE FAST RECOVERY 4000V 2325A |
|
SBR8U60P5-13Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 60V 8A POWERDI5 |
|
S1ML RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1000V 1A SUB SMA |
|
S07M-M-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 700MA DO219AB |
|
PMEG6010CEJ,115Nexperia |
DIODE SCHOTTKY 60V 1A SOD323F |
|
RB751CS-40T2RROHM Semiconductor |
DIODE SCHOTTKY 30V 30MA VMN2 |
|
1N6620USRoving Networks / Microchip Technology |
DIODE GEN PURP 220V 1.2A A-MELF |