RES CHAS MNT 13 OHM 1% 10W
DIODE FAST RECOVERY 4000V 2325A
IDC CABLE- AKR14B/AE14M/AKR14B
Type | Description |
---|---|
Series: | - |
Package: | Box |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 4000 V |
Current - Average Rectified (Io): | 2325A |
Voltage - Forward (Vf) (Max) @ If: | 2.6 V @ 2500 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 5.4 µs |
Current - Reverse Leakage @ Vr: | 150 mA @ 4 kV |
Capacitance @ Vr, F: | - |
Mounting Type: | Chassis Mount |
Package / Case: | DO-200AD |
Supplier Device Package: | W121 |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SBR8U60P5-13Zetex Semiconductors (Diodes Inc.) |
DIODE SBR 60V 8A POWERDI5 |
|
S1ML RTGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1000V 1A SUB SMA |
|
S07M-M-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 700MA DO219AB |
|
PMEG6010CEJ,115Nexperia |
DIODE SCHOTTKY 60V 1A SOD323F |
|
RB751CS-40T2RROHM Semiconductor |
DIODE SCHOTTKY 30V 30MA VMN2 |
|
1N6620USRoving Networks / Microchip Technology |
DIODE GEN PURP 220V 1.2A A-MELF |
|
S1YL-CTDComponents |
CUT-TAPE VERSION. STANDARD RECO |
|
S1PDHM3/85AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 1A DO220AA |
|
NTE6071NTE Electronics, Inc. |
R-1600V 85A ANODE CASE |
|
HS2DA-F1-0000HF |
DIODE GEN PURP 200V 2A DO214AC |
|
VS-8EWX06FNTRR-M3Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A D-PAK |
|
NSVR1020MW2T1GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 20V 1A SOD323 |
|
IDH12SG60CXKSA2IR (Infineon Technologies) |
DIODE SCHOTTKY 600V 12A TO220-2 |