DIODE SCHOTTKY 45V 10A TO263AB
Type | Description |
---|---|
Series: | TMBS® |
Package: | Tube |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 45 V |
Current - Average Rectified (Io): | 10A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 680 mV @ 10 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 500 µA @ 45 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | 200°C (Max) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
JAN1N5711UR-1Roving Networks / Microchip Technology |
DIODE SCHOTTKY 70V 33MA DO213AA |
|
SS1H9-E3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 90V 1A DO214AC |
|
PMEG60T10ELRXNexperia |
PMEG60T10ELR/SOD123/SOD2 |
|
ES1DAL M3GTSC (Taiwan Semiconductor) |
35NS, 1A, 200V, SUPER FAST RECOV |
|
SB340Sanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 40V 3A DO201AD |
|
VS-307UA200Vishay General Semiconductor – Diodes Division |
DIODE GP 2KV 330A DO205AB |
|
MUR860JWeEn Semiconductors Co., Ltd |
ULTRAFAST POWER DIODE |
|
DZ600N16KHPSA1IR (Infineon Technologies) |
DIODE GEN PURP 1.6KV 735A MODULE |
|
RS1KL RQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 800MA SUBSMA |
|
SK320A R3GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 200V 3A DO214AC |
|
GP08G-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 800MA DO204 |
|
APT100DL60BGRoving Networks / Microchip Technology |
DIODE GEN PURP 600V 100A TO247 |
|
SE20PAGHM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1.6A DO220AA |