CAP CER 0.082UF 10V X7R 2220
DIODE GEN PURP 100V 3A AXIAL
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.25 V @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 300 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 100 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | -65°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-41HFR120Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1.2KV 40A DO203AB |
|
APT30DQ100KGRoving Networks / Microchip Technology |
DIODE GEN PURP 1KV 30A TO220 |
|
MBRB8H100T4GSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 8A D2PAK |
|
AR3PMHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE AVALANCH 1KV 1.6A TO277A |
|
5822SMJ/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 40V 3A DO214AB |
|
VIT2060G-M3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 10A TO262AA |
|
SE20DJHM3/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 3.9A TO263AC |
|
1N6622Roving Networks / Microchip Technology |
DIODE GEN PURP 600V 1.2A AXIAL |
|
RF081LAM2STFTRROHM Semiconductor |
RF081LAM2STF IS THE HIGH RELIABI |
|
SS26HE3_A/HVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 2A DO214AA |
|
VS-10MQ060-M3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 60V 1.5A DO214AC |
|
AES1C-HFComchip Technology |
AUTOMOTIVE RECTIFIER SUPER FAST |
|
NTE589NTE Electronics, Inc. |
R-400PRV 6A 150NS |