Type | Description |
---|---|
Series: | - |
Package: | Bag |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400 V |
Current - Average Rectified (Io): | 6A |
Voltage - Forward (Vf) (Max) @ If: | 1.3 V @ 6 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 150 ns |
Current - Reverse Leakage @ Vr: | 10 µA @ 400 V |
Capacitance @ Vr, F: | 300pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | Axial |
Supplier Device Package: | Axial |
Operating Temperature - Junction: | -50°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BYS11-90-E3/TRVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 90V 1.5A DO214AC |
|
1N4151TRVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 75V 150MA DO35 |
|
HERAF1007G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 10A ITO220AC |
|
VS-45EPS16LHM3Vishay General Semiconductor – Diodes Division |
DIODES - TO-247-E3 |
|
HER305BULKEIC Semiconductor, Inc. |
DIODE GEN PURP 400V 3A DO201AD |
|
VF20100S-M3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 20A 100V ITO220AB |
|
BAV20WS-G3-08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 250MA SOD323 |
|
MUR160AHR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO204AL |
|
RS3A R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 3A DO214AB |
|
S12GCHR7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 12A DO214AB |
|
PMEG6010EP,115Nexperia |
DIODE SCHOTTKY 60V 1A CFP5 |
|
SR104HA0GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 1A DO204AL |
|
ES1FL RUGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 300V 1A SUB SMA |