RES SMD 105 OHM 1% 1/5W 0402
RES 642 OHM 0.5% 1/4W 1210
DIODE GEN PURP 100V 1A SUB SMA
DC DC CONVERTER 13.8V 150W
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 1 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.8 µs |
Current - Reverse Leakage @ Vr: | 5 µA @ 100 V |
Capacitance @ Vr, F: | 9pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
VS-70HFR100Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 1KV 70A DO203AB |
|
CDBA340-GComchip Technology |
DIODE SCHOTTKY 40V 3A DO214AC |
|
SE70PDHM3_A/IVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 2.9A TO277A |
|
TSOD1F4HM RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A SOD123FL |
|
BAS21W-7-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 200V 200MA SOT323 |
|
VS-SD1500C30LVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 3KV 1600A DO200AB |
|
NTE6036NTE Electronics, Inc. |
R-600V 85A FAST REC KK |
|
BYT53D-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.9A SOD57 |
|
RS3A-E3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 3A DO214AB |
|
JAN1N4246Roving Networks / Microchip Technology |
DIODE GEN PURP 400V 1A AXIAL |
|
RS2K M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 2A DO214AA |
|
RHRG5060Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 50A TO247-2 |
|
ESH2D M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO214AA |