R-600V 85A FAST REC KK
Type | Description |
---|---|
Series: | - |
Package: | Bag |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 85A |
Voltage - Forward (Vf) (Max) @ If: | 1.75 V @ 267 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 500 ns |
Current - Reverse Leakage @ Vr: | 100 µA @ 600 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Stud Mount |
Package / Case: | DO-203AA, DO-5, Stud |
Supplier Device Package: | DO-5 |
Operating Temperature - Junction: | -40°C ~ 125°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BYT53D-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 1.9A SOD57 |
|
RS3A-E3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 3A DO214AB |
|
JAN1N4246Roving Networks / Microchip Technology |
DIODE GEN PURP 400V 1A AXIAL |
|
RS2K M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 2A DO214AA |
|
RHRG5060Sanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 50A TO247-2 |
|
ESH2D M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 2A DO214AA |
|
ES2F-E3/5BTVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 2A DO214AA |
|
HSM221CTL-ERochester Electronics |
RECTIFIER DIODE, 0.1A |
|
BYV26C-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1A SOD57 |
|
MUR420-TPMicro Commercial Components (MCC) |
DIODE GEN PURP 200V 4A DO201AD |
|
SF18G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO204AL |
|
183NQ100-1SMC Diode Solutions |
DIODE SCHOTTKY 100V 180A PRM1-1 |
|
SS26S-M3/5ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 2A 60V DO-214AC |