DIODE SCHOTTKY 8A 50V DO-214AB
DIODE SCHOTTKY 3A 30V DPAK
AIS BASEBAND PROCESSOR W/RF SYNT
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 30 V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 600 mV @ 3 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 200 µA @ 20 V |
Capacitance @ Vr, F: | 189pF @ 5V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
1N4148WDComponents |
DIODE GEN PURP 75V 150MA SOD123F |
|
SS210L RQGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 2A SUB SMA |
|
B340A-E3/61TVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 40V 3A DO214AC |
|
SS110LWHRVGTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 1A SOD123W |
|
US1B-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 100V 1A SMA |
|
VS-3EJH01HM3/6AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 3A DO221AC |
|
S2G-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE GPP 1.5A 400V DO-214AA |
|
MUR160HR0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1A DO204AC |
|
SS36-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 3A 60V DO-214AB |
|
RFN20TF6SROHM Semiconductor |
DIODE GEN PURP 600V 20A TO220NFM |
|
SBYV27-100-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 2A DO204AC |
|
FFSB0865B-F085Sanyo Semiconductor/ON Semiconductor |
650V 8A SIC SBD GEN1.5 |
|
STPS2L30AFSTMicroelectronics |
DIODE SCHOTTKY 30V 2A SMA |