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RF1S640SM

RF1S640SM

MOSFET N-CH 200V 18A TO263AB

RF1S640SM

RF1S640SM

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Part No :

RF1S640SM

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 200V 18A TO263AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10805 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 20 - Nov 24 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:64 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1275 pF @ 25 V
FET Feature:-
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-263AB
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RF1S640SM is available at GangBo-ic.com, Please review product page below for detailed information, including RF1S640SM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RF1S640SM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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