DIODE SCHOTTKY 10A 120V TO-277A
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, eSMP®, TMBS® |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 120 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 820 mV @ 10 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 400 µA @ 120 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CSFB202-GComchip Technology |
DIODE GEN PURP 100V 2A DO214AA |
|
EM01ZV1Sanken Electric Co., Ltd. |
DIODE GEN PURP 200V 1A AXIAL |
|
BAV19WS-E3-18Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 250MA SOD323 |
|
S12JC M6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 12A DO214AB |
|
IDW12G65C5FKSA1Rochester Electronics |
RECTIFIER DIODE |
|
JANTX1N5623Roving Networks / Microchip Technology |
DIODE GEN PURP 1KV 1A AXIAL |
|
FES8HT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 500V 8A TO220AC |
|
CGRM4007-HFComchip Technology |
DIODE GEN PURP 1KV 1A SOD123 |
|
HS2AA M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1.5A DO214AC |
|
RB751S40,115Nexperia |
DIODE SCHOTTKY 40V 120MA SOD523 |
|
BYWF29-100HE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 8A ITO220AC |
|
CDBA3150-HFComchip Technology |
DIODE SCHOTTKY 150V 3A DO214AC |
|
BY127MGPHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GP 1.25KV 1.75A DO204 |