DIODE GEN PURP 600V 12A DO214AB
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 12A |
Voltage - Forward (Vf) (Max) @ If: | 1.1 V @ 12 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 1 µA @ 600 V |
Capacitance @ Vr, F: | 78pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AB, SMC |
Supplier Device Package: | DO-214AB (SMC) |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IDW12G65C5FKSA1Rochester Electronics |
RECTIFIER DIODE |
|
JANTX1N5623Roving Networks / Microchip Technology |
DIODE GEN PURP 1KV 1A AXIAL |
|
FES8HT-E3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 500V 8A TO220AC |
|
CGRM4007-HFComchip Technology |
DIODE GEN PURP 1KV 1A SOD123 |
|
HS2AA M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 1.5A DO214AC |
|
RB751S40,115Nexperia |
DIODE SCHOTTKY 40V 120MA SOD523 |
|
BYWF29-100HE3/45Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 8A ITO220AC |
|
CDBA3150-HFComchip Technology |
DIODE SCHOTTKY 150V 3A DO214AC |
|
BY127MGPHE3/73Vishay General Semiconductor – Diodes Division |
DIODE GP 1.25KV 1.75A DO204 |
|
BYV98-50-TAPVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 50V 4A SOD64 |
|
S3KBSanyo Semiconductor/ON Semiconductor |
DIODE GP 800V 3A SMB |
|
VSSC8L45-M3/9ATVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 45V 4.9A DO214AB |
|
RS3A-E3/9ATVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 3A DO214AB |