DIODE SCHOTTKY 100V 8A TO277A
Type | Description |
---|---|
Series: | eSMP®, TMBS® |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 8A |
Voltage - Forward (Vf) (Max) @ If: | 750 mV @ 8 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 60 µA @ 100 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277A (SMPC) |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SK84CHM6GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 8A DO214AB |
|
BYWB29-150-E3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 150V 8A TO263AB |
|
BYT77-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 800V 3A SOD64 |
|
BAV20WS-F2-0000HF |
DIODE GEN PURP 200V 200MA SOD323 |
|
SS39 V6GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 3A 90V DO-214AB |
|
ESH3BHE3_A/HVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
|
BAT85,133Nexperia |
DIODE SCHOTTKY 30V 200MA DO34 |
|
S5D-E3/57TVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 200V 5A DO214AB |
|
FSV10100VSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 100V 10A TO277-3 |
|
BYW32-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 2A SOD57 |
|
RS1BTRSMC Diode Solutions |
DIODE GEN PURP 100V 1A SMA |
|
DSI30-12AS-TRLWickmann / Littelfuse |
DIODE GEN PURP 1.2KV 30A TO263 |
|
LS4150GS08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 600MA SOD80 |