Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 100 V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 670 mV @ 10 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 22.94 ns |
Current - Reverse Leakage @ Vr: | 60 µA @ 100 V |
Capacitance @ Vr, F: | 796pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-277, 3-PowerDFN |
Supplier Device Package: | TO-277-3 |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BYW32-TRVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 200V 2A SOD57 |
|
RS1BTRSMC Diode Solutions |
DIODE GEN PURP 100V 1A SMA |
|
DSI30-12AS-TRLWickmann / Littelfuse |
DIODE GEN PURP 1.2KV 30A TO263 |
|
LS4150GS08Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 600MA SOD80 |
|
S1KLS RVGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1.2A SOD123 |
|
JANTX1N6642USRoving Networks / Microchip Technology |
DIODE GEN PURP 75V 300MA D5D |
|
HS5A R7GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 50V 5A DO214AB |
|
NTE5832NTE Electronics, Inc. |
R-100 PRV 3A CATH CASE |
|
SB10200TASMC Diode Solutions |
DIODE SCHOTTKY 200V 10A DO201AD |
|
HER206G A0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 2A DO204AC |
|
RGL1KR13Diotec Semiconductor |
DIODE FR DO-213AA 800V 1A |
|
IDW15E65D2Rochester Electronics |
IDW15E65 - SILICON POWER DIODE |
|
SS14HM3_B/IVishay General Semiconductor – Diodes Division |
1A 40V SM SCHOTTKY RECT SMA |