DIODE GEN PURP 600V 4A DO201AD
Type | Description |
---|---|
Series: | - |
Package: | Tape & Box (TB) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 4A |
Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 4 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 35 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Capacitance @ Vr, F: | 80pF @ 4V, 1MHz |
Mounting Type: | Through Hole |
Package / Case: | DO-201AD, Axial |
Supplier Device Package: | DO-201AD |
Operating Temperature - Junction: | -55°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
GP08GE-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 800MA DO204 |
|
RSX301LAM30TRROHM Semiconductor |
DIODE SCHOTTKY 30V 3A PMDTM |
|
ACDBA260-HFComchip Technology |
DIODE SCHOTTKY 60V 2A DO214AC |
|
DSA12TCRochester Electronics |
RECTIFIER DIODE, 1.2A, 200V |
|
PMEG2020CPAS115Rochester Electronics |
RECTIFIER DIODE, SCHOTTKY |
|
AS1PJ-M3/84AVishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.5A DO220 |
|
MUR480ESGSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 800V 4A DO201AD |
|
FESB8JTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263AB |
|
CDSW4448-GComchip Technology |
DIODE GEN PURP 75V 500MA SOD123 |
|
RB521FS-30T40RBROHM Semiconductor |
DIODE SCHOTTKY 30V 100MA 0402 |
|
CDBJFSC10650-GComchip Technology |
DIODE, SIC STKY 10A 650V TO-220F |
|
1N4935RLGSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 1A DO41 |
|
3A60 R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO204AC |