DIODE AVALANCHE 600V 1.5A DO220
Type | Description |
---|---|
Series: | eSMP® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Avalanche |
Voltage - DC Reverse (Vr) (Max): | 600 V |
Current - Average Rectified (Io): | 1.5A (DC) |
Voltage - Forward (Vf) (Max) @ If: | 1.15 V @ 1.5 A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 1.5 µs |
Current - Reverse Leakage @ Vr: | 5 µA @ 600 V |
Capacitance @ Vr, F: | 10.4pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-220AA |
Supplier Device Package: | DO-220AA (SMP) |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MUR480ESGSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 800V 4A DO201AD |
|
FESB8JTHE3/81Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 600V 8A TO263AB |
|
CDSW4448-GComchip Technology |
DIODE GEN PURP 75V 500MA SOD123 |
|
RB521FS-30T40RBROHM Semiconductor |
DIODE SCHOTTKY 30V 100MA 0402 |
|
CDBJFSC10650-GComchip Technology |
DIODE, SIC STKY 10A 650V TO-220F |
|
1N4935RLGSanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 200V 1A DO41 |
|
3A60 R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO204AC |
|
RS2JAHM2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 1.5A DO214AC |
|
SK110B R5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 100V 1A DO214AA |
|
RURD660S9ASanyo Semiconductor/ON Semiconductor |
DIODE GEN PURP 600V 6A TO252AA |
|
DSK10C-AT1Rochester Electronics |
RECTIFIER DIODE |
|
MUR440HB0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 4A DO201AD |
|
240NQ020-1SMC Diode Solutions |
DIODE SCHOTTKY 20V 240A PRM1-1 |