DIODE GEN PURP 200V 2A DO214AA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200 V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 1 V @ 2 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 50 ns |
Current - Reverse Leakage @ Vr: | 5 µA @ 200 V |
Capacitance @ Vr, F: | 28pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -50°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BAV116WSQ-7Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 85V 215MA SOD323 |
|
SK14B R5GTSC (Taiwan Semiconductor) |
DIODE SCHOTTKY 40V 1A DO214AA |
|
NTE6040NTE Electronics, Inc. |
R-600 PRV 60A CATH CASE |
|
ESH1DM RSGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 200V 1A MICRO SMA |
|
SS22-M3/5BTVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 2A 20V DO-214AA |
|
S1MB M4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1000V 1A DO214AA |
|
HS2MA R3GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1KV 1.5A DO214AC |
|
ES2DTRSMC Diode Solutions |
DIODE GEN PURP 200V 2A SMA |
|
ES1C M2GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 150V 1A DO214AC |
|
RFN2L4STE25ROHM Semiconductor |
DIODE SCHOTTKY 400V 1.5A PMDS |
|
DSEP12-12AWickmann / Littelfuse |
DIODE GEN PURP 1.2KV 15A TO220AC |
|
PDR5K-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 750V 5A POWERDI5 |
|
IDP08E65D2XKSA1IR (Infineon Technologies) |
DIODE GEN PURP 650V 8A TO220-2 |