CAP CER 430PF 25V C0G/NP0 0402
DIODE GEN PURP 1.2KV 15A TO220AC
Type | Description |
---|---|
Series: | HiPerFRED™ |
Package: | Tube |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 1200 V |
Current - Average Rectified (Io): | 15A |
Voltage - Forward (Vf) (Max) @ If: | 2.75 V @ 15 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 40 ns |
Current - Reverse Leakage @ Vr: | 100 µA @ 1200 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Through Hole |
Package / Case: | TO-220-2 |
Supplier Device Package: | TO-220AC |
Operating Temperature - Junction: | -55°C ~ 175°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PDR5K-13Zetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 750V 5A POWERDI5 |
|
IDP08E65D2XKSA1IR (Infineon Technologies) |
DIODE GEN PURP 650V 8A TO220-2 |
|
MCL103CDiotec Semiconductor |
SCHOTTKY SOD-106 20V 0.2A |
|
IDL10G65C5XUMA2IR (Infineon Technologies) |
DIODE SCHOTTKY 650V 10A VSON-4 |
|
SDURD1060BTRSMC Diode Solutions |
DIODE GEN PURP 600V DPAK |
|
RS1JL RUGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 800MA SUBSMA |
|
S12MC V6GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 12A DO214AB |
|
CMR3U-04 BK PBFREECentral Semiconductor |
DIODE GEN PURP 400V 3A SMC |
|
VBT1080S-E3/4WVishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 10A 80V TO-263AB |
|
BAS170WS-G3-18Vishay General Semiconductor – Diodes Division |
DIODE SCHOTTKY 70V 70MA SOD323 |
|
UG1A-E3/54Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 50V 1A DO204AL |
|
UFS315J/TR13Roving Networks / Microchip Technology |
DIODE GEN PURP 150V 3A DO214AB |
|
LSM835J/TR13Roving Networks / Microchip Technology |
DIODE SCHOTTKY 35V 8A DO214AB |