DIODE SCHOTTKY 120V 20A TO263AB
Type | Description |
---|---|
Series: | TMBS® |
Package: | Tube |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 120 V |
Current - Average Rectified (Io): | 20A |
Voltage - Forward (Vf) (Max) @ If: | 1.33 V @ 20 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 250 µA @ 120 V |
Capacitance @ Vr, F: | - |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263AB |
Operating Temperature - Junction: | -40°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MSE1PGHM3/89AVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 400V 1A MICROSMP |
|
VS-1N3882RVishay General Semiconductor – Diodes Division |
DIODE GEN PURP 300V 6A DO203AA |
|
RRE07VTM6SFHTRROHM Semiconductor |
RECTIFIER DIODES (CORRESPONDS TO |
|
SB1003M3-TL-WSanyo Semiconductor/ON Semiconductor |
DIODE SCHOTTKY 30V 1A 3MCPH |
|
B380Q-13-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 80V 3A SMC |
|
BYG20J-E3/TR3Vishay General Semiconductor – Diodes Division |
DIODE AVALANCHE 600V 1.5A |
|
B150-13-FZetex Semiconductors (Diodes Inc.) |
DIODE SCHOTTKY 50V 1A SMA |
|
HER306G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO201AD |
|
S3J-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 3A SMC |
|
CDBC3200-HFComchip Technology |
DIODE SCHOTTKY 200V 3A DO214AB |
|
MBRH12030RGeneSiC Semiconductor |
DIODE SCHOTTKY 30V 120A D-67 |
|
LL4006G L0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A MELF |
|
HERA807G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 8A TO220AC |