CAP CER 1UF 10V X8L 0805
CAP CER 82PF 250V C0G/NP0 1812
DIODE SCHOTTKY 50V 1A SMA
PWR XFMR LAMINATED 6VA TH
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 50 V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 700 mV @ 1 A |
Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | - |
Current - Reverse Leakage @ Vr: | 500 µA @ 50 V |
Capacitance @ Vr, F: | 110pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA |
Operating Temperature - Junction: | -65°C ~ 150°C |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
HER306G R0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 600V 3A DO201AD |
|
S3J-13-FZetex Semiconductors (Diodes Inc.) |
DIODE GEN PURP 600V 3A SMC |
|
CDBC3200-HFComchip Technology |
DIODE SCHOTTKY 200V 3A DO214AB |
|
MBRH12030RGeneSiC Semiconductor |
DIODE SCHOTTKY 30V 120A D-67 |
|
LL4006G L0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 1A MELF |
|
HERA807G C0GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 800V 8A TO220AC |
|
VS-40HFL80S05Vishay General Semiconductor – Diodes Division |
DIODE GEN PURP 800V 40A DO203AB |
|
S2M R5GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 1KV 2A DO214AA |
|
HS1GL RQGTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 1A SUB SMA |
|
VS-SD853C45S50KVishay General Semiconductor – Diodes Division |
DIODE GP 4.5KV 990A DO200AC |
|
CMDD4448 BK PBFREECentral Semiconductor |
DIODE GEN PURP 75V 250MA SOD323 |
|
STPS3150UFSTMicroelectronics |
DIODE SCHOTTKY 150V 3A SMBFLAT |
|
S2GHM4GTSC (Taiwan Semiconductor) |
DIODE GEN PURP 400V 2A DO214AA |